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[1]李海霞,王 宇,林威威,等.准三维纳米结构p-ZnO:Fe/n-GaN基自驱动紫外光电探测器[J].武汉工程大学学报,2021,43(03):277-282.[doi:10.19843/j.cnki.CN42-1779/TQ.202103030]
 LI Haixia,WANG Yu,LIN Weiwei,et al.Quasi-Three-Dimensional Nanostructure p-ZnO:Fe/n-GaN for Self-Powered Ultraviolet Photodetector[J].Journal of Wuhan Institute of Technology,2021,43(03):277-282.[doi:10.19843/j.cnki.CN42-1779/TQ.202103030]
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
43
期数:
2021年03期
页码:
277-282
栏目:
材料科学与工程
出版日期:
2021-06-30

文章信息/Info

Title:
Quasi-Three-Dimensional Nanostructure p-ZnO:Fe/n-GaN for Self-Powered Ultraviolet Photodetector
文章编号:
1674 - 2869(2021)03 - 0277 - 06
作者:
李海霞王 宇林威威刘冰怡张中原刘 阳*
武汉工程大学光电信息与能源工程学院、数理学院,光学信息与模式识别湖北省重点实验室,湖北 武汉 430205
Author(s):
LI HaixiaWANG YuLIN WeiweiLIU BingyiZHANG ZhongyuanLIU Yang*
School of Optical Information and Energy Engineering,School of Mathematics and Physics;Hubei Key Laboratory of Optical Information and Pattern Recognition,Wuhan Institute of Technology,Wuhan 430205,China
关键词:
准三维纳米结构p-ZnO:Fe/n-GaNp-n异质结紫外光电探测器上升时间回复时间
Keywords:
quasi-3D nanostructure p-ZnO:Fe/n-GaNp-n heterojunctionultraviolet photodetectorrise timerecovery time
分类号:
O472
DOI:
10.19843/j.cnki.CN42-1779/TQ.202103030
文献标志码:
A
摘要:
采用化学气相沉积(CVD)法成功制备了p-ZnO:Fe/n-GaN准三维纳米结构,并基于p-ZnO:Fe/n-GaN异质结制备了高性能的自驱动紫外光电探测器。微结构研究结果表明:Fe元素成功掺入ZnO纳米结构,使其转化为p型半导体。室温光致发光谱紫外光发射峰红移,表明p-ZnO:Fe纳米结构中形成了浅受主能级缺陷。由于p-n结的光伏效应,紫外光电探测器展示出自驱动响应特性。ZnO的p型掺杂造成的电荷传输距离缩短及其独特的准三维纳米结构,使得探测器展示出高的开关比和快速响应特性。在零偏压和-1 V偏压下,紫外光电探测器的电流开关比分别为58.3和92.0,上升和回复时间均小于10 ms。该高性能紫外光电探测器的成功研制可为纳米级光电开关的制备提供理论思路和技术指导。
Abstract:
The quasi-three-dimensional (3D) nanostructure p-ZnO:Fe/n-GaN were successfully fabricated by chemical vapor deposition method,and the self-powered ultraviolet (UV) photodetectors with high performance were then fabricated based on the p-ZnO:Fe/n-GaN heterojunction. Microstructure results show that Fe atoms are doped into ZnO nanostructure successfully. The photoluminescence (PL) spectra at room temperature show that UV emission peak position of p-ZnO:Fe has red shifted,which is attributed to shallow acceptor levels introduced by Fe-doped into ZnO. Due to the photovoltaic effect of p-n junction,the photodetector demonstrates self-powered characteristics under UV light. Its unique quasi-3D nanostructure and the shorten charge transfer distance are attributed to p-type doping of ZnO, which makes the photodetector show high current on/off ratio and fast response. Under zero bias and -1 V reverse bias,the response and recovery time are both less than 10 ms,and the photocurrent on/off ratios of UV photodetector are 58.3 and 92.0,respectively. The fabricated UV photodetector with high performance can provide theoretical ideas and technical guidance in the field of nanoscale photoswitch.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2021-03-26基金项目:国家自然科学基金青年项目(11804257);湖北省自然科学基金青年项目(2018CFB106);武汉工程大学博士启动基金(18QD24);武汉工程大学校长基金(XZJJ2020132)作者简介:李海霞,博士,硕士研究生导师。E-mail:lihaixia@wit.edu.cn*通讯作者:刘 阳,博士,副教授。E-mail:274184621@qq.com引文格式:李海霞,王宇,林威威,等. 准三维纳米结构p-ZnO:Fe/n-GaN基自驱动紫外光电探测器[J]. 武汉工程大学学报,2021,43(3):277-282.
更新日期/Last Update: 2021-06-28