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[1]汪建华,刘聪,熊礼威.辅助气体对分阶段制备金刚石膜的影响[J].武汉工程大学学报,2014,(07):24-29.[doi:103969/jissn16742869201407005]
　WANG Jian hua,LIU Cong,XIONG Li wei.Influence of auxiliary gas on stage growth of diamond films[J].Journal of Wuhan Institute of Technology,2014,(07):24-29.[doi:103969/jissn16742869201407005]
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辅助气体对分阶段制备金刚石膜的影响(/HTML)
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
期数:
2014年07期
页码:
24-29
栏目:
材料科学与工程
出版日期:
2014-07-31

文章信息/Info

Title:
Influence of auxiliary gas on stage growth of diamond films
文章编号:
16742869(2014)07002406
作者:
汪建华; 刘聪;  熊礼威
等离子体化学与新材料湖北省重点实验室（武汉工程大学），湖北 武汉 430074
Author(s):
WANG Jianhua; LIU Cong; XIONG Liwei
Hubei Key Laboratory of Plasma Chemical and Advanced Materials(Wuhan Institute of Technology),Wuhan 430074,China
关键词:
化学气相沉积; 金刚石膜; 微波等离子体
Keywords:
chemical vapor deposition; diamond film; microwave plasma
分类号:
O484
DOI:
103969/jissn16742869201407005
文献标志码:
A
摘要:
采用形核甲烷/氢气生长-辅助气体/甲烷/氢气生长的新工艺，在镜面抛光的单晶硅片上制备了金刚石膜，并用扫描电子显微镜和激光拉曼光谱等测试方法对薄膜的表面形貌和质量性能进行了表征；研究了添加辅助气体对已有金刚石晶型生长的影响.结果表明：以甲烷/氢气为气源时，金刚石膜生长率一般为1.8 μm/h，当分别加入氧气、二氧化碳、氮气时，其生长率都有所提高，其中加入二氧化碳时，其生长率是甲烷/氢气为气源的3倍多，但是加入氩气时，其生长率下降;通过新工艺，在加入氮气或氩气时，第一生长阶段为微米，而第二生长阶段为纳米尺寸，最后制备出具有微/纳米双层复合金刚石膜.
Abstract:
Diamond films were deposited on the mirrorpolished monocrystalline silicon substrate using a new deposition process of nucleationmethane/hydrogen growthauxiliary gas/methane/hydrogen growth.The effects of different auxiliary gases on the stage growth of the diamond films were investigated.Scanning electron microscope and Raman spectroscopy were used to detect the surface morphology and the quality of diamond films.The results show that the growth rate of diamond film is 1.8 μm/h using methane/hydrogen mixture; the growth rate of diamond film increases when oxygen,carbon dioxide and nitrogen are added into the methane/hydrogen mixture,respectively,in which the growth rate of diamond film after adding carbon dioxide is over 3 times than that of using methane/hydrogen mixture; but the growth rate of diamond film decreases after adding the argon.Microdiamond is formed in the first stage of diamond film growth,while the nanodiamond is formed in the second stage of diamond film growth.Finally,a micronanocrystalline dual layer diamond film is obtained by using the new process.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期：20140504基金项目：国家自然科学基金资助项目（No. 11175137）作者简介：汪建华（1955），男，湖北武汉人，教授，博士，博士生导师. 研究方向：低温等离子体与新材料技术.
更新日期/Last Update: 2014-08-20