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[1]安盼龙,赵瑞娟,许丽萍,等.内建电场对纳构半导体功函数的调制[J].武汉工程大学学报,2011,(04):50-53.[doi:10.3969/j.issn.16742869.2011.04.013]
　AN Pan long,ZHAO Rui juan,XU Li ping,et al.Modulation on work function of nanosemiconductor material by builtin electric field[J].Journal of Wuhan Institute of Technology,2011,(04):50-53.[doi:10.3969/j.issn.16742869.2011.04.013]
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内建电场对纳构半导体功函数的调制
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
期数:
2011年04期
页码:
50-53
栏目:
材料科学与工程
出版日期:
2011-04-30

文章信息/Info

Title:
Modulation on work function of nanosemiconductor material
by builtin electric field
文章编号:
16742869(2011)04005004
作者:
安盼龙1; 3; 赵瑞娟2; 许丽萍3; 杨艳3
1.中北大学电子测试技术国家重点实验室,山西 太原 030051;
2.中北大学仪器科学与动态测试教育部重点实验室,山西 太原 030051;
3.中北大学理学院,山西 太原 030051
Author(s):
AN Panlong1; 3;  ZHAO Ruijuan2;  XU Liping3;  YANG Yan3
1.National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China;
2.Key Laboratory of Instrument Science & Dynamic Measurement, North University of China, Taiyuan 030051, China;
3.School of Science, North University of China, Taiyuan 030051, China
关键词:
内建电场; 异质结; 量子阱; 功函数; 介观光电效应
Keywords:
builtin electric field;  heterojunction;  quantum well;  work function;  mesophotoelectric effect
分类号:
TB383
DOI:
10.3969/j.issn.16742869.2011.04.013
文献标志码:
A
摘要:
从理论上分析了纳结构半导体内建电场产生条件,以及如何对内建电场进行调制,并通过对内建电场进行调制进而对半导体的功函数进行调制,推导出了内建电场与功函数的简易关系,并进行了模拟计算,为进一步实现介观光电效应,制造介观光电器件提供理论支撑.
Abstract:
In this paper, the condition and methods of nanosemiconductor builtin electric field were analyzed in theory. The work function of semiconductors was then controlled by the modulation of builtin electric fields, and the relationship between builtin electric field and work function were carried out finally. The simulations of this work provide good support for mesophotoelectric effect and the fabrication of mesooptoelectronic devices.

参考文献/References:

［1］WEN T D, ANAST ASSAKIS E T. Emperature dependence of strains and st resses in undercrit ical cubic superlat tices and heterojunct ions［J］.Physical Review B,1996,53(8):4741.
［2］温廷敦,张文栋.介观压阻效应［J］.微纳电子技术,2003（7/8）:4143.
［3］孟庆巨,刘海波,孟庆辉.半导体器件物理［M］.北京:科学出版社,2006:5862.
［4］Vlasov A P,Sokolovskii B S. The effect of builtin electric field on As diffusion in HgCdTe gradedbandgap epitaxial layers［J］.Thin Solid Films,2004,459:2831.
［5］Lai C Y, Hsu T M. Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy［J］.Appl Phys,2007,91:531533.
［6］Williams D P, Andreev A D. Surface integral determination of builtin electric fields and analysis of exciton binding energies in nitridebased quantum dots［J］.Physica E 2004,21:358362.
［7］许丽萍,温廷敦.超晶格中内建电场的压力调制［J］.华北工学院学报,2002,23(2):7981.
［8］Liping Xu, Tingdun Wen,Xiaofeng Yang. Mesopiezoresistive effects in doublebarrier resonant tunneling structures［J］.Appl Phys Lett,2008，92：043508.
［9］Wen T D, Xu L P, Anastassakis E. On the Piezoelectric Signals of Multilayer Systems［J］.Phys Stat Sol(a),2000,177:467474.

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备注/Memo

备注/Memo:
收稿日期:20101104基金项目:中北大学电子测试技术国家重点实验室青年基金资助(20102011);中北大学校青年基金资助作者简介:安盼龙（1978）,男,陕西渭南人,讲师,硕士.研究方向:纳米功能材料.
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